The IEEE Photonics Technology Letters recently published a significant advancement in integrated photonics: “Heterogeneously Integrated III-V/Silicon C-Band Tunable Lasers on 300-mm Silicon Photonic Wafers.”
This innovative laser design emits spectrally pure light across the 1510–1570 nm range, delivering high on-chip optical power and positioning it as a strong candidate for next-generation integrated photonic systems. The breakthrough paves the way for scalable and high-performance photonic integration at the wafer level.
Authors
Haisheng Rong, Intel Corporation, Santa Clara, CA, USA
Guan-Lin Su, Intel Corporation, Santa Clara, CA, USA
Ranjeet Kumar, Intel Corporation, Santa Clara, CA, USA
Duanni Huang, Intel Corporation, Santa Clara, CA, USA
David Gold, Intel Corporation, Santa Clara, CA, USA
Richard Jones, Intel Corporation, Santa Clara, CA, USA
